1981-05-27
1988-07-12
James, Andrew J.
357 53, 357 234, 357 54, H01L 2978, H01L 2944
Patent
active
047573627
ABSTRACT:
A MOS transistor is featured by the provision of a conductive covering element for covering a drift channel region of the semiconductor device. The covering element is interposed by an insulating layer which is relatively thick. The covering element comprises a floating conductive element, disposed on the insulating layer, and a field plate means, disposed on a second insulating layer.
REFERENCES:
patent: T964009 (1977-11-01), Chiu et al.
patent: 3841926 (1974-10-01), Garnache et al.
patent: 3890698 (1975-06-01), Clark
patent: 3967310 (1976-06-01), Horiuchi et al.
patent: 4009483 (1977-02-01), Clark
patent: 4079504 (1978-03-01), Kosa
patent: 4157563 (1979-06-01), Bosselaar
patent: 4172260 (1979-10-01), Okabe et al.
patent: 4199774 (1980-04-01), Plummer
patent: 4270137 (1981-05-01), Coe
patent: 4290077 (1981-09-01), Ronen
patent: 4292729 (1981-10-01), Powell
patent: 4394674 (1983-07-01), Sakuma et al.
Biwa Tetuo
Nakagawa Kiyotoshi
James Andrew J.
Lamont John
Sharp Kabushiki Kaisha
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