High voltage MOS field effect semiconductor device

Details High voltage MOS field effect semiconductor device High voltage MOS field effect semiconductor device

1988-03-09

1990-05-15

Wojciechowicz, Edward J.

357 2314, 357 41, 357 50, 357 52, 357 53, 357 54, 357 55, 357 237, H01L 2504

Patent

active

049262432

ABSTRACT:
A high voltage MOS field-effect semiconductor device comprising, as formed on a single seimconductor substrate a high voltage first MOS field-effect transistor and a conventional second MOS field-effect transistor operable at a lower voltage than the first transistor. The semiconductor substrate is covered with an aluminum or like conductor layer over the region thereof where the conventional second field-effect transistor is located.

REFERENCES:
patent: 4177480 (1979-12-01), Hintzmann
patent: 4194214 (1980-03-01), Awan et al.
patent: 4290077 (1981-09-01), Ronen
patent: 4519050 (1985-05-01), Folmsbee
patent: 4536941 (1985-08-01), Kuo et al.
A. G. Fortino et al., Method of Making a Submicron Field-Effect Transistor, IBM Technical Disclosure Bulletin, vol. 23, No. 2, pp. 534-556, (Jul., 1980).
T. Yamaguchi et al., Process and Device Design of a 1000-V MOS IC, IEEE Transactions on Electron Devices, vol. ED-29, No. 8, pp. 1171-1178, (Aug. 1982).
L. D. Hartsough et al., Aluminum and Aluminum Alloy Sputter Deposition for VLSI, Solid State Technology, pp. 66-72, (Dec., 1979).

Affiliated with

Also associated with

Rating

High voltage MOS field effect semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High voltage MOS field effect semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High voltage MOS field effect semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-625381