High voltage modified cascode circuit

Details High voltage modified cascode circuit High voltage modified cascode circuit

1990-02-27

1991-10-29

Mottola, Steven

Amplifiers

With semiconductor amplifying device

Including plural stages cascaded

330277, H03F 368, H03F 316

Patent

active

050619039

ABSTRACT:
A new type of high voltage FET circuit has been developed which offers a dramatic improvement in performance as compared to a common source amplifier stage. The new circuit offers inherent performance advantages in both MIC and MMIC power amplifiers. To achieve this end, the FET circuit has a common source FET connected to a common gate FET, with the common source FET having a width substantially greater than that of the common gate FET such that the common source FET does not saturate even when the common gate FET is turned fully on. To provide biasing for the circuit such that its breakdown voltage can be substantially increased, a RC circuit including a connected in parallel diode is used.

REFERENCES:
patent: 3609412 (1971-09-01), Okumura
patent: 4342967 (1982-08-01), Regan et al.
patent: 4658220 (1987-04-01), Heston et al.
patent: 4760350 (1988-07-01), Ayasli

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