Patent
1976-06-01
1977-11-15
Wojciechowicz, Edward J.
357 41, 357 46, 357 51, 357 59, H01L 2978, H01L 2702, H01L 2904
Patent
active
040588220
ABSTRACT:
In a metal oxide semiconductor device of the diffusion-self-alignment type which comprises a semiconductor body having a conductivity of one type, a drain and a source regions having a conductivity opposite that of the semiconductor body, and a channel region of the same conductivity type as the semiconductor body and having a higher conductivity than that of the semiconductor body, said channel region being formed in such a manner to surround the source region through the use of double diffusion techniques. An active pinched resistor layer of the opposite conductivity type to that of the semiconductor body and having a lower conductivity than that of the drain and the source regions is formed on the surface of the semiconductor body to extend between the drain and the channel regions. A field plate or overlay metallization is disposed on an insulating layer adjacent the drain metallization and extends outwardly towards the gate metallization so that it overlies a part of the active pinched resistor layer near the drain contact region.
REFERENCES:
patent: 3845495 (1974-10-01), Cauge et al.
patent: 3926694 (1975-12-01), Cauge et al.
Awane Katunobu
Biwa Tetuo
Hattori Hironori
Tamaki Hiroshi
Sharp Kabushiki Kaisha
Wojciechowicz Edward J.
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