High voltage low current surface-emitting LED

Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide

Reexamination Certificate

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Details

C257S079000, C257S099000, C257SE27121, C257SE33005, C257SE33006

Reexamination Certificate

active

07985970

ABSTRACT:
A monolithic LED chip is disclosed comprising a plurality of junctions or sub-LEDs (“sub-LEDs”) mounted on a submount. The sub-LEDs are serially interconnected such that the voltage necessary to drive the sub-LEDs is dependent on the number of serially interconnected sub-LEDs and the junction voltage of the sub-LEDs. Methods for fabricating a monolithic LED chip are also disclosed with one method comprising providing a single junction LED on a submount and separating the single junction LED into a plurality of sub-LEDs. The sub-LEDs are then serially interconnected such that the voltage necessary to drive the sub-LEDs is dependent on the number of the serially interconnected sub-LEDs and the junction voltage of the sub-LEDs.

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