Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Having only two terminals and no control electrode – e.g.,...
Reexamination Certificate
2006-10-24
2006-10-24
Smith, Zandra V. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Having only two terminals and no control electrode , e.g.,...
C257S107000, C257S120000
Reexamination Certificate
active
07126166
ABSTRACT:
In one embodiment, a lateral FET cell is formed in a body of semiconductor material. The body of semiconductor material includes alternating layers of opposite conductivity type that extend between a trench drain region and a trench gate structure. The trench gate structure controls at least one sub-surface channel region. The body of semiconductor material provides sub-surface drift regions to reduce on resistance without increasing device area.
REFERENCES:
patent: 5294824 (1994-03-01), Okada
patent: 6097063 (2000-08-01), Fujihira
patent: 6448625 (2002-09-01), Hossain et al.
patent: 6507071 (2003-01-01), Tihanyi
patent: 6509220 (2003-01-01), Disney
patent: 6566709 (2003-05-01), Fujihira
patent: 6589845 (2003-07-01), Nair et al.
patent: 6639277 (2003-10-01), Rumennik et al.
Hossain Zia
Nair Rajesh S.
Quddus Mohammed Tanvir
Tu Shanghui Larry
Jackson Kevin B.
Rose Kiesha
Semiconductor Components Industries L.L.C.
Smith Zandra V.
LandOfFree
High voltage lateral FET structure with improved on... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with High voltage lateral FET structure with improved on..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High voltage lateral FET structure with improved on... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3718406