High voltage lateral FET structure with improved on...

Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Having only two terminals and no control electrode – e.g.,...

Reexamination Certificate

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C257S107000, C257S120000

Reexamination Certificate

active

07126166

ABSTRACT:
In one embodiment, a lateral FET cell is formed in a body of semiconductor material. The body of semiconductor material includes alternating layers of opposite conductivity type that extend between a trench drain region and a trench gate structure. The trench gate structure controls at least one sub-surface channel region. The body of semiconductor material provides sub-surface drift regions to reduce on resistance without increasing device area.

REFERENCES:
patent: 5294824 (1994-03-01), Okada
patent: 6097063 (2000-08-01), Fujihira
patent: 6448625 (2002-09-01), Hossain et al.
patent: 6507071 (2003-01-01), Tihanyi
patent: 6509220 (2003-01-01), Disney
patent: 6566709 (2003-05-01), Fujihira
patent: 6589845 (2003-07-01), Nair et al.
patent: 6639277 (2003-10-01), Rumennik et al.

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