High voltage junction solid-state switch

Details High voltage junction solid-state switch High voltage junction solid-state switch

1981-03-27

1986-04-29

Wojciechowicz, Edward J.

357 44, 357 46, 357 48, 357 37, 357 38, 357 39, 357 21, 357 22, H01L 2978

Patent

active

045860734

ABSTRACT:
A high voltage solid-state switch, which provides bidirectional blocking, consists of a first p- type semiconductor body on an n type semiconductor substrate. A p+ type anode region and an n+ type cathode region exist in portions of the semiconductor body. A second p type region of higher impurity concentration than the semiconductor body surrounds the cathode region. The anode region and second p type region are separated from each other by a portion of the semiconductor body. The semiconductor substrate, which acts as a gate, has an electrode connected thereto. Separate electrodes are connected to the anode and cathode regions.

REFERENCES:
patent: 3755012 (1973-08-01), George et al.
patent: 4060821 (1977-11-01), Houston et al.
A MOS-Controlled Triac Device-Scharf et al.-pp. 222-223, 1978 IEEE International Solid-State Circuits Conference.

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