High voltage isolation semiconductor capacitor digital...

Details High voltage isolation semiconductor capacitor digital... High voltage isolation semiconductor capacitor digital...

2008-02-15

2010-06-22

Berhane, Adolf (Department: 2838)

Wave transmission lines and networks

Long line elements and components

Strip type

Reexamination Certificate

active

07741935

ABSTRACT:
According to one embodiment, there is provided a semiconductor digital communication device comprising communication drive and sense electrodes formed in a single plane, where the electrodes have relatively high sidewalls. The relatively high sidewalls permit low electrical field densities to be obtained in the sense and drive electrodes during operation, and further permit very high breakdown voltages to be obtained between the electrodes, and between the drive electrode and an underlying ground plane substrate. The device effects communications between drive and receive circuits through the drive and sense electrodes by capacitive means, and in a preferred embodiment is capable of effecting relatively high-speed digital communications. The device may be formed in a small package using, by way of example, CMOS or other semiconductor fabrication and packaging processes.

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