High voltage integration circuit with freewheeling diode...

Details High voltage integration circuit with freewheeling diode... High voltage integration circuit with freewheeling diode...

2010-06-07

2011-11-01

Warren, Matthew E (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

With pn junction isolation

C257S500000, C257S551000, C257S577000, C257SE27019, C257SE27037

Reexamination Certificate

active

08049306

ABSTRACT:
A high voltage integrated circuit contains a freewheeling diode embedded in a transistor. It further includes a control block controlling a high voltage transistor and a power block—including the high voltage transistor—isolated from the control block by a device isolation region. The high voltage transistor includes a semiconductor substrate of a first conductivity type, a epitaxial layer of a second conductivity type on the semiconductor substrate, a buried layer of the second conductivity type between the semiconductor substrate and the epitaxial layer, a collector region of the second conductivity type on the buried layer, a base region of the first conductivity type on the epitaxial layer, and an emitter region of the second conductivity type formed in the base region. The power block further includes a deep impurity region of the first conductivity type near the collector region to form a PN junction.

REFERENCES:
patent: 4104571 (1978-08-01), Gurwicz et al.
patent: 5469103 (1995-11-01), Shigekane
patent: 6448587 (2002-09-01), Kohno et al.
patent: 6753674 (2004-06-01), Grundl et al.
patent: 7034345 (2006-04-01), Chang et al.
patent: 7420260 (2008-09-01), Kwon et al.

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