Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2006-05-30
2006-05-30
Thomas, Tom (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S508000, C257S520000, C257S543000, C257S572000
Reexamination Certificate
active
07053463
ABSTRACT:
The manufacturing process comprises the steps of growing epitaxially a first layer from a semiconductor material substrate, forming in the first layer a first and a second buried region spaced from one another and having conductivity of the type opposite that of the first layer; growing epitaxially on the first layer a second layer of semiconductor material having the same type of conductivity as the first layer; forming in the second layer a trench extending in depth beyond the buried regions, arranged between the buried regions, and having, in plan view, a frame shape; forming an oxide layer covering the lateral walls and the base wall of the trench; and filling the remaining part of the trench with an isolating material. By this means, the portion of the second layer surrounded by the trench defines a first high-voltage resistor having a vertical structure and current flow, whereas the portion of the first layer arranged below the trench defines a second high-voltage resistor arranged in series with the first high-voltage resistor, and also having a vertical structure and current flow.
REFERENCES:
patent: 3982263 (1976-09-01), Dobkin
patent: 4896243 (1990-01-01), Chatterjee et al.
patent: 4933739 (1990-06-01), Harari
patent: 5122846 (1992-06-01), Haken
patent: 5229310 (1993-07-01), Sivan
patent: 5304838 (1994-04-01), Ozawa
patent: 5373183 (1994-12-01), Beasom
patent: 5408124 (1995-04-01), Palara
patent: 5696396 (1997-12-01), Tokura et al.
patent: 5825067 (1998-10-01), Takeuchi et al.
patent: 5949122 (1999-09-01), Scaccianoce
patent: 6030898 (2000-02-01), Liu
patent: 6373100 (2002-04-01), Pages et al.
patent: 6696916 (2004-02-01), Sanfilippo et al.
patent: 61-232657 (1986-10-01), None
patent: 6-342878 (1994-12-01), None
patent: 06342878 (1994-12-01), None
Iannucci Robert
Jorgenson Lisa K.
Seed IP Law Group PLLC
STMicroelectronics S.r.l.
Thomas Tom
LandOfFree
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