High voltage integrated semiconductor devices using a thermoplas

Details High voltage integrated semiconductor devices using a thermoplas High voltage integrated semiconductor devices using a thermoplas

1981-09-15

1985-07-16

Munson, Gene M.

357 55, 357 68, 357 71, H01L 2712, H01L 2906, H01L 2348

Patent

active

045300011

ABSTRACT:
The semiconductor device comprises a semiconductor substrate, a plurality of spaced active elements, for example, of a planer type formed on one surface of the substrate, and a supporting plate bonded to the opposite surface of the substrate. A groove is cut through the substrate to reach the supporting plate for isolating the active elements.

REFERENCES:
patent: 3416224 (1968-12-01), Armstrong
patent: 3475664 (1969-10-01), De Vries
patent: 4296428 (1981-10-01), Haraszti
Bodendorf et al., "Active Silicon Chip Carrier", IBM Technical Disclosure Bulletin, vol. 15, (7/72), pp. 656-657.
"Integrated Photo-Coupled Semiconductor Crosspoint Switches", Proceedings of the 10th Conference on Solid State Devices, Tokyo, 1978; Japanese Journal of Applied Physics, vol. 18, (1979), Supplement 18-1, pp. 405-410.

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