1989-11-20
1990-09-18
Munson, Gene M.
357 48, 357 52, 357 68, H01L 2972, H01L 2704, H01L 2934, H01L 2348
Patent
active
049582100
ABSTRACT:
Premature avalanche breakdown resulting from high electric fields produced by metal interconnections crossing underlying high conductivity regions of an integrated circuit is eliminated by selectively providing discontinuities in the high conductivity regions underlying the metal interconnection paths.
REFERENCES:
patent: 2981877 (1961-04-01), Noyce
patent: 3302076 (1967-01-01), Kang et al.
patent: 3405329 (1968-10-01), Loro et al.
patent: 3647580 (1972-03-01), Weinerth
patent: 3751720 (1973-08-01), Nestork
patent: 3796598 (1974-03-01), Gejyo et al.
patent: 3836998 (1974-09-01), Kocsis et al.
patent: 3885999 (1975-05-01), Fusaroli et al.
patent: 4006492 (1977-02-01), Eichelberger et al.
Sze, Physics of Semiconductor Devices, Wiley, N.Y. (1969), pp. 111-117, 481-485.
Adler Michael S.
Krishna Surinder
Torreno, Jr. Manuel L.
Davis Jr. James C.
General Electric Company
Munson Gene M.
Snyder Marvin
LandOfFree
High voltage integrated circuits does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with High voltage integrated circuits, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High voltage integrated circuits will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1574835