Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – With pn junction isolation
Reexamination Certificate
2006-02-07
2006-02-07
Weiss, Howard (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
With pn junction isolation
C257S557000
Reexamination Certificate
active
06995453
ABSTRACT:
In a high voltage integrated circuit, a low voltage region is separated from a high voltage region by a junction termination. A bipolar transistor in the high voltage region is surrounded by an isolation region having a low doping concentration. The use of a low-doped isolation region increases the size of an active region without reduction of a breakdown voltage.
REFERENCES:
patent: 6022778 (2000-02-01), Contiero et al.
Choi Young-suk
Jeon Chang-ki
Kim Jong-jib
Kim Min-hwan
Kim Sung-lyong
Fairchild Korea Semiconductor Ltd.
Pizarro-Crespo Marcos D.
Weiss Howard
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