High voltage integrated circuit including bipolar transistor...

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – With pn junction isolation

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S557000

Reexamination Certificate

active

06995453

ABSTRACT:
In a high voltage integrated circuit, a low voltage region is separated from a high voltage region by a junction termination. A bipolar transistor in the high voltage region is surrounded by an isolation region having a low doping concentration. The use of a low-doped isolation region increases the size of an active region without reduction of a breakdown voltage.

REFERENCES:
patent: 6022778 (2000-02-01), Contiero et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

High voltage integrated circuit including bipolar transistor... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High voltage integrated circuit including bipolar transistor..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High voltage integrated circuit including bipolar transistor... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3633435

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.