High voltage integrated circuit diode with a charge injecting no

Details High voltage integrated circuit diode with a charge injecting no High voltage integrated circuit diode with a charge injecting no

1996-10-04

1998-05-26

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

With specified shape of pn junction

257212, H01L 2906, H01L 310352

Patent

active

057570655

ABSTRACT:
An integrated CMOS diode with an injection ring which enables construction of an integrated CMOS diode that has the performance characteristics of a high impedance value, when the diode is in the off state, and low impedance, when the diode is in the on state in addition to high breakdown voltages using standard CMOS processing techniques to construct the integrated circuit diode.

REFERENCES:
patent: 3035186 (1962-06-01), Doucette
patent: 4366496 (1982-12-01), Jaecklin

Affiliated with

Also associated with

Rating

High voltage integrated circuit diode with a charge injecting no does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High voltage integrated circuit diode with a charge injecting no, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High voltage integrated circuit diode with a charge injecting no will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1964725