Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including high voltage or high power devices isolated from...
Reexamination Certificate
2011-03-15
2011-03-15
Huynh, Andy (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including high voltage or high power devices isolated from...
C257S499000, C257S502000, C257S506000, C257SE27026
Reexamination Certificate
active
07906828
ABSTRACT:
A high-voltage integrated circuit includes a low-voltage circuit region having a plurality of semiconductor devices, which operate with respect to a ground voltage, a high-voltage circuit region having a plurality of semiconductor devices, which operate with respect to a voltage that varies from the ground voltage to a high voltage, a junction termination and a first isolation region electrically isolating the low-voltage circuit region from the high-voltage circuit region, a high-voltage resistant diode formed between the low-voltage circuit region and the high-voltage circuit region, and a second isolation region surrounding the high-voltage resistant diode and electrically isolating the high-voltage resistant diode from the low-voltage circuit region and the high-voltage circuit region.
REFERENCES:
patent: 4825275 (1989-04-01), Tomassetti
patent: 5767562 (1998-06-01), Yamashita
patent: 6486512 (2002-11-01), Jeon et al.
patent: 6600206 (2003-07-01), Jeon et al.
patent: 6995453 (2006-02-01), Kim et al.
Jeon Chang-Ki
Kim Sung-lyong
Fairchild Korea Semiconductor Ltd.
FitzGerald Esq. Thomas R.
Hiscock & Barclay LLP
Huynh Andy
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