Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including high voltage or high power devices isolated from...
Patent
1996-06-26
1998-04-07
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including high voltage or high power devices isolated from...
257369, 257401, 257501, 257776, H01L 2900, H01L 2976, H01L 2994
Patent
active
057367744
ABSTRACT:
A high voltage integrated circuit for driving each gate of a power device(s) having one main terminal connected to a high potential side of a high voltage source. The high voltage IC includes a low potential side low voltage circuit portion to which current is supplied by a low voltage source having a reference potential point based on a low potential side of the high voltage source, and a high potential side low voltage circuit portion to which current is supplied by a low voltage source having a reference potential point based on one of the main terminals of the power device. The low potential side low voltage circuit portion is separated from the high potential side low voltage circuit portion, by a loop-shaped high voltage junction terminating structure. A high voltage n-channel transistor for shifting a level of signals from the low potential side low voltage circuit portion for transmission to the high potential side low voltage circuit portion is provided with another loop-shaped high voltage junction terminating structure, such that a drain (collector) electrode is located inside the loop of the junction terminating structure, and source (emitter) and gate (base) electrodes are located outside the loop of the structure. Signal wiring extending from the drain electrode to the high potential side low voltage portion passes over the high voltage junction terminating structures, such that the signal wiring is spaced apart from top surfaces of the junction terminating structures.
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Fuji Electric & Co., Ltd.
Ngo Ngan V.
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