Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide
Reexamination Certificate
2005-12-06
2005-12-06
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
Diamond or silicon carbide
C257S760000, C257S763000, C257S532000, C257S411000
Reexamination Certificate
active
06972436
ABSTRACT:
Capacitors and interconnection structures for silicon carbide are provided having an oxide layer, a layer of dielectric material and a second oxide layer on the layer of dielectric material. The thickness of the oxide layers may be from about 0.5 to about 33 percent of the thickness of the oxide layers and the layer of dielectric material. Capacitors and interconnection structures for silicon carbide having silicon oxynitride layer as a dielectric structure are also provided. Such a dielectric structure may be between metal layers to provide a metal-insulator-metal capacitor or may be used as a inter-metal dielectric of an interconnect structure so as to provide devices and structures having improved mean time to failure. Methods of fabricating such capacitors and structures are also provided.
REFERENCES:
patent: 3924024 (1975-12-01), Naber et al.
patent: 4466172 (1984-08-01), Batra
patent: 4875083 (1989-10-01), Palmour
patent: 5170231 (1992-12-01), Fujii et al.
patent: 5170455 (1992-12-01), Goossen et al.
patent: 5184199 (1993-02-01), Fujii et al.
patent: 5185689 (1993-02-01), Maniar
patent: 5302933 (1994-04-01), Kudo et al.
patent: 5479316 (1995-12-01), Smrtic et al.
patent: 5506421 (1996-04-01), Palmour
patent: 5510630 (1996-04-01), Agarwal et al.
patent: 5587870 (1996-12-01), Anderson et al.
patent: 5589705 (1996-12-01), Saito et al.
patent: 5726463 (1998-03-01), Brown et al.
patent: 5739564 (1998-04-01), Kosa et al.
patent: 5763905 (1998-06-01), Harris
patent: 5812364 (1998-09-01), Oku et al.
patent: 5837572 (1998-11-01), Gardner et al.
patent: 5877045 (1999-03-01), Kapoor
patent: 5885870 (1999-03-01), Maiti et al.
patent: 5939763 (1999-08-01), Hao et al.
patent: 5946567 (1999-08-01), Weng et al.
patent: 5960289 (1999-09-01), Tsui et al.
patent: 5972788 (1999-10-01), Ryan et al.
patent: 5972801 (1999-10-01), Lipkin et al.
patent: 6025608 (2000-02-01), Harris et al.
patent: 6028012 (2000-02-01), Wang
patent: 6048766 (2000-04-01), Gardner et al.
patent: 6054352 (2000-04-01), Ueno
patent: 6063698 (2000-05-01), Tseng et al.
patent: 6096607 (2000-08-01), Ueno
patent: 6100169 (2000-08-01), Suvorov et al.
patent: 6100184 (2000-08-01), Zhao et al.
patent: 6107142 (2000-08-01), Suvorov et al.
patent: 6117735 (2000-09-01), Ueno
patent: 6136728 (2000-10-01), Wang
patent: 6165822 (2000-12-01), Okuno et al.
patent: 6190973 (2001-02-01), Berg et al.
patent: 6204203 (2001-03-01), Narwankar et al.
patent: 6211035 (2001-04-01), Moise et al.
patent: 6221700 (2001-04-01), Okuno et al.
patent: 6228720 (2001-05-01), Kitabatake et al.
patent: 6238967 (2001-05-01), Shiho et al.
patent: 6239463 (2001-05-01), Williams et al.
patent: 6246076 (2001-06-01), Lipkin et al.
patent: 6297172 (2001-10-01), Kashiwagi
patent: 6316791 (2001-11-01), Schorner et al.
patent: 6342748 (2002-01-01), Nakamura et al.
patent: 6344663 (2002-02-01), Slater, Jr. et al.
patent: 6455892 (2002-09-01), Okuno et al.
patent: 6593620 (2003-07-01), Hshieh et al.
patent: 6610366 (2003-08-01), Lipkin et al.
patent: 6767843 (2004-07-01), Lipkin et al.
patent: 2001/0055852 (2001-12-01), Moise et al.
patent: 2002/0072247 (2002-06-01), Lipkin et al.
patent: 198 09 554 (1998-09-01), None
patent: 19900171 (2000-12-01), None
patent: 10036208 (2002-02-01), None
patent: 0 637 069 (1995-02-01), None
patent: 0 637 069 (1995-02-01), None
patent: 03157974 (1991-07-01), None
patent: 08264766 (1996-10-01), None
patent: 09205202 (1997-08-01), None
patent: 11191559 (1999-07-01), None
patent: 11238742 (1999-08-01), None
patent: 11261061 (1999-09-01), None
patent: 11266017 (1999-09-01), None
patent: 11274487 (1999-10-01), None
patent: 2000049167 (2000-02-01), None
patent: 2000082812 (2000-03-01), None
patent: 2000-252461 (2000-09-01), None
patent: 02000252461 (2000-09-01), None
patent: 2000106371 (2001-04-01), None
patent: WO 97/17730 (1997-05-01), None
patent: WO 97/39485 (1997-10-01), None
patent: WO 98/02924 (1998-01-01), None
patent: WO99/63591 (1999-12-01), None
patent: WO 00-13236 (2000-03-01), None
Dimitrijev et al, “Nitridation . . . Carbide”, IEEE Elec.Dev. Lett., vol. 18 No. 5 May 1997 pp 175-177.
Agarwal et al. “A Critical Look at the Performance Advantages and Limitations of 4H-SiC Power UMOSFET Structures,”Proceedings of the International Symposium on Power Semiconductor Devices and IC's.(1996) pp. 119-122.
Agarwal et al. “Temperature Dependence of Fowler-Nordheim Current in 6H- and 4H-SiC MOS Capacitors,”IEEE Electron Device Letters.(Dec. 1997) vol. 18, No. 12, pp. 592-594.
Kobayashi et al. “Dielectric Breakdown and Current Conduction of Oxide/Nitride/Oxide Multi-Layer Structures,” 1990 Symposium on VLSI Technology,IEEE,pp. 119-120.
Lipkin et al. “Insulator Investigation on SiC for Improved Reliability,”IEE Transactions on Electron Devices.(Mar. 1999) vol. 46, No. 3, pp. 525-532.
Ma et al. “Fixed and trapped charges at oxide-nitride-oxide heterostructure interfaces formed by remote plasma enhanced chemical vapor deposition,”J. Vac. Sci. Technol. B(Jul./Aug. 1993) vol. 11, No. 4, pp. 1533-1540.
Lipkin, Lori A. U.S. Patent Application entitled “Method of N2O Annealing an Oxide Layer on a Silicon Carbide Layer.” Filed Apr. 12, 2001, U.S. Appl. No. 09/834,283.
Slater et al. U.S. Patent Application entitled “Silicon Carbide CMOS Devices.” Filed Apr. 15, 1996, U.S. Appl. No. 08/631,926.
Wang et al. “High Temperature Characteristics of High-Quality SiC MIS Capacitors with O/N/O Gate Dielectric,”IEEE Transactions on Electron Devices.vol. 47, No. 2, Feb. 2000.
Invitation to Pay Additional Fees for PCT/US02/09393 dated Jul. 7, 2003.
A.K. Agarwal, J.B. Casady, L.B. Rowland, W.F. Valek, and C.D. Brandt, “1400 V 4H-SiC Power MOSFET's,” Materials Science Forum vols. 264-268, pp. 989-992, 1998.
A.K. Agarwal, J.B. Casady, L.B. Rowland, W.F. Valek, M.H. White, and C.D. Brandt, “1.1 kV 4H-SiC Power UMOSFET's,”IEEE Electron Device Letters,vol. 18, No. 12, pp. 586-588, Dec. 1997.
A.K. Agarwal, N.S. Saks, S.S. Mani, V.S. Hegde and P.A. Sanger, “Investigation of Lateral RESURF, 6H-SiC MOSFETs,”Materials Science Forum,vols. 338-342, pp. 1307-1310, 2000.
A.V. Suvorov, L.A. Lipkin, G.M. Johnson, R. Singh and J.W. Palmour, “4H-SiC Self-Aligned Implant-Diffused Structure for Power DMOSFETs,”Materials Science Forumvols. 338-342, pp. 1275-1278, 2000.
Agarwal et al. “Temperature Dependence of Fowler-Nordheim Current in 6H-and 4H-SiC MOS Capacitors,”IEEE Electron Device Letters,vol. 18, No. 12, Dec. 1997, pp. 592-594.
Chakraborty et al. “Interface properties of N2O-annealed SiO2/SiC systems,”Proc. 2000 IEEE Electron Devices Meeting.Hong Kong, China, Jun. 24, 2000, pp. 108-111.
Chang et al. “Observation of a Non-stoichiometric Layer at the Silicon Dioxide-Silicon Carbide Interface: Effect of Oxidation Temperature and Post-Oxidation Processing Conditions,”Mat. Res. Soc. Symp. Proc.vol. 640, 2001.
Cho et al. “Improvement of charge trapping by hydrogen post-oxidation annealing in gate oxide of 4H-SiC methel-oxide-semiconductor capacitors,”Applied Physics Letters.vol. 77, No. 8, pp. 1215-1217.
Chung et al. “The Effect of Si:C Source Ratio on SiO2/SiC Interface State Density for Nitrogen Doped 4H and 6H-SiC,”Materials Science Forum.(2000) vols. 338-342, pp. 1097-1100.
Chung et al., “Effects of Anneals in Ammonia on the Interface Trap Density Near the Band Edges in 4H-Silicon Carbide Metal-Oxide-Semiconductor Capacitors”,Applied Physics Letters,vol. 77, No. 22, Nov. 27, 2000, pp. 3601-3603.
D. Alok, E. Arnold, and R. Egloff, “Process Dependence of Inversion Layer Mobility in 4H-SiC Devices,”Materials Science Forum,vols. 338-342, pp. 1077-1080, 2000.
Das, Mrinal K. Graduate thesis entitled,Fundamental Studies of the Silicon Carbide MOS Structure.Purdue University.
De Mao et al., “Thermal Oxidation of SiC in N2O”,J. Electrochem. Soc.,vol. 141, 1994, pp. L150-L152.
Fukuda et al. ȁ
Das Mrinal Kanti
Hagleitner Helmut
Lipkin Lori A.
Palmour John W.
Sheppard Scott
Cree Inc.
Jackson Jerome
Myers Bigel & Sibley & Sajovec
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