High voltage, high speed Schottky semiconductor device and metho

Details High voltage, high speed Schottky semiconductor device and metho High voltage, high speed Schottky semiconductor device and metho

1988-11-29

1991-06-25

James, Andrew J.

357 52, 357 53, H01L 2948, H01L 2956

Patent

active

050271660

ABSTRACT:
A high voltage, high speed Schottky diode has an electrode of aluminum or like Schottky barrier metal formed on a semiconductor region to create a Schottky barrier therebetween. Also formed on the semiconductor region is a extremely thin resistive layer of, typically, oxidized titanium surrounding the barrier metal electrode and electrically connected thereto. The resistive layer also creates a Schottky barrier at its interface with the semiconductor region and serves to expand the depletion region due to the barrier metal electrode, thereby preventing the concentration of the electric field at the periphery of the barrier metal electrode and so enhancing the voltage withstanding capability of the diode.

REFERENCES:
patent: 4009481 (1977-02-01), Reindl
patent: 4157563 (1979-06-01), Bosselaar
patent: 4612560 (1986-09-01), Dortu et al.
patent: 4626884 (1986-12-01), Shannon
patent: 4646115 (1987-02-01), Shannon et al.
patent: 4665608 (1987-05-01), Okamoto et al.
patent: 4862229 (1989-08-01), Mundy et al.
S. M. Sze, "Physics of Semiconductor Devices", 1936, pp. 245-311.

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