High voltage, high frequency amplifier

Details High voltage, high frequency amplifier High voltage, high frequency amplifier

1980-05-01

1982-08-03

Mullins, James B.

Amplifiers

With semiconductor amplifying device

Including field effect transistor

330293, 330296, 330311, H03F 316

Patent

active

043429670

ABSTRACT:
A high frequency amplifier utilizes series-connected transistors to achieve high voltage class C operation. High frequency input power is coupled to the gate of a first FET which is normally biased off. The source of a second FET is coupled to the drain of the first FET. The drain of the second FET, which forms the output of the amplifier, is coupled through a radio frequency choke to a supply voltage. The gate of the second FET is dc biased at about one half of the supply voltage. A capacitor coupled between the gate of the second FET and ground controls the level of high frequency power applied to the second FET. The amplifier can be operated at a dc voltage which is approximately equal to one half the sum of the individual breakdown voltages of the serially connected FET's.

REFERENCES:
patent: 2943267 (1960-06-01), Randise
patent: 3401349 (1968-09-01), Mitchell
Shaeffer, "VMOS-A Breakthrough in Power MOSFET Technology", Siliconix Application Note An 76-3, May 1976, pp. 1-12.
Nishizawa et al., "Field-Effect Transistor Versus Analog Transistor, (Static Induction Transistor)", IEEE, Transactions on Electron Devices, ED-22, No. 4, Apr. 1975, pp. 185-197.

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