High voltage, high current Schottky barrier solar cell

Batteries: thermoelectric and photoelectric – Thermoelectric – Radiation pyrometer

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357 15, 357 16, 136 89SJ, H01L 2714, H01L 3100, H01L 2948, H01L 29205

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active

040539180

ABSTRACT:
A Schottky barrier solar cell is disclosed, consisting of a layer of wide band gap semiconductor material such as AlGaAs on which a very thin film of semi-transparent metal is deposited to form a Schottky barrier. The layer of the wide band gap semiconductor material is on top of a layer of narrower band gap semiconductor material, to which one of the cell's contacts may be attached directly or through a substrate. The cell's other contact is a grid structure which is deposited on the thin metal film.

REFERENCES:
patent: 3049622 (1962-08-01), Ahlstrom et al.
patent: 3322575 (1967-05-01), Ruehrwein
patent: 3508126 (1970-04-01), Newman et al.
patent: 3757123 (1973-09-01), Archer et al.
H. Hovel et al "High-Efficiency Gal-x AlxAs P-N Junction Solar Cells" IBM Tech. Disclosure Bulletin vol. 15, (5/73) p. 3741.
H. Hovel et al "Solar Cell Structures" IBM Technical Disclosure Bulletin vol. 16, (12/73) pp. 2079-2080.
H. Hovel et al "The Spectrl Response . . . GAl-x-Alx-GaAs Solar Cells" Gallium Arsenide and Related Compounds Proc. 4th Int. Symposium (9/72) pp. 205-213 Publ. Institute of Physics, London 1973.

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