Patent
1987-11-10
1988-09-27
James, Andrew J.
357 20, 357 238, 357 38, H01L 2934
Patent
active
047745606
ABSTRACT:
At least one annular region (11,12, . . . ) extends around an active device region (10) and is located within the spread of a depletion layer (25) from a reverse-biased p-n junction (20) formed by the device region (10) to increase the breakdown voltage of the junction (20). The device region (10) and/or at least one inner annular region (11,12, . . . ) includes at least one shallower portion (10b,11b, . . . ) which extends laterally outwards from a deep portion (10a,11a,12a, . . . ) and faces the surrounding annular region to change the spacing and depth relationship of these regions. This permits high punch-through voltages to be achieved between the regions (10,11,12, . . . ) while reducing peak fields at the bottom outer corners of the regions (10,11,12, . . . ). Inwardly-extending shallow portions (11c,12c, . . . ) may also be included. The shallow portions (10b,11b,11c,12c . . . ) may extend around the whole of a perimeter of the region or be localized where higher electrostatic fields may occur around the perimeter.
REFERENCES:
patent: 3341380 (1967-09-01), Mets et al.
patent: 4024564 (1977-05-01), Shimada et al.
patent: 4414560 (1983-11-01), Lidow
patent: 4532534 (1985-07-01), Ford et al.
James Andrew J.
Key Gregory A.
Mayer Robert T.
U.S. Philips Corp.
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