High voltage guard ring with variable width shallow portion

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Details

357 238, 357 38, 357 52, 357 59, H01L 2906

Patent

active

046022660

ABSTRACT:
At least one annular region (11,12, . . . ) extends around an active device region (10) and is located within the spread of a depletion layer (25) from a reverse-biased p-n junction (20) formed by the device region (10) to increase the breakdown voltage of the junction (20). The device region (10) and/or at least one inner annular region (11,12, . . . ) includes at least one shallower portion (10b,11b, . . . ) which extends laterally outwards from a deep portion (10a,11a,12a, . . . ) and faces the surrounding annular region to change the spacing and depth relationship of these regions. This permits high punch-through voltages to be achieved between the regions (10,11,12, . . . ) while reducing peak fields at the bottom outer corners of the regions (10,11,12, . . . ). Inwardly-extending shallow portions (11c,12c, . . . ) may also be included. The shallow portions (10b,11b,11c,12c . . . ) may extend around the whole of a perimeter of the region or be localized where higher electrostatic fields may occur around the perimeter.

REFERENCES:
patent: 3341380 (1967-09-01), Mets et al.
patent: 3391287 (1968-07-01), Kao et al.
patent: 3551760 (1970-12-01), Tokuyama et al.
patent: 3971061 (1976-07-01), Matsushita et al.
patent: 4374389 (1983-02-01), Temple

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