High voltage generation circuit for semiconductor memory device

Details High voltage generation circuit for semiconductor memory device High voltage generation circuit for semiconductor memory device

1996-10-31

1998-05-19

Wong, Peter S.

Electric power conversion systems

Current conversion

With voltage multiplication means

365201, 327536, 324765, H02M 318, G11C 700, G05F 302, G01R 3126

Patent

active

057544182

ABSTRACT:
A high voltage generation circuit for a semiconductor memory device comprising a high voltage detector for detecting a high voltage, a ring oscillator for generating a pulse signal in response to an output signal from the high voltage detector when a power-up signal is made active, a high voltage pump circuit for performing a charge pumping operation to generate the high voltage and transfer the generated high voltage to a high voltage output terminal, and a pump controller for controlling the charge pumping operation of the high voltage pump circuit in response to the pulse signal from the ring oscillator. The high voltage generation circuit further comprises an operating voltage detector for detecting whether an external voltage from an external voltage source has an operating voltage level, a burn-in test voltage detector for detecting whether the external voltage from the external voltage source has a level higher than the operating voltage level, a switching circuit for transferring the external voltage from the external voltage source to the high voltage output terminal, and a driver for selectively driving the high voltage detector and the switching circuit in response to output signals from the operating voltage detector and burn-in test voltage detector.

REFERENCES:
patent: 4809230 (1989-02-01), Konishi et al.
patent: 5063304 (1991-11-01), Iyengar
patent: 5349559 (1994-09-01), Park et al.
patent: 5373472 (1994-12-01), Ohsawa
patent: 5396113 (1995-03-01), Park et al.
patent: 5424629 (1995-06-01), Fujiwara et al.
patent: 5452253 (1995-09-01), Choi
patent: 5467356 (1995-11-01), Choi
patent: 5510749 (1996-04-01), Arimoto
patent: 5530640 (1996-06-01), Hara et al.
patent: 5592115 (1997-01-01), Kassapian
patent: 5617044 (1997-04-01), Takamoto
patent: 5642072 (1997-06-01), Miyamoto et al.

Affiliated with

Also associated with

Rating

High voltage generation circuit for semiconductor memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High voltage generation circuit for semiconductor memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High voltage generation circuit for semiconductor memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1859112