High voltage field effect transistor

Details High voltage field effect transistor High voltage field effect transistor

1978-12-18

1981-12-29

Munson, Gene M.

357 53, H01L 2978, H01L 2940

Patent

active

043085490

ABSTRACT:
A circular high voltage field effect transistor suitable for inclusion in LSI circuits, and the process for making said transistor, are described. The transistor comprises a central drain and concentric circular field plate, gate and source. Alternate embodiments include an intermediate gate and resistive gate. Implantation and diffusion techniques are described for producing the source and channel regions, and various device dimensions may be varied to improve either current or voltage handling capability or speed capability.

REFERENCES:
patent: 3845495 (1974-10-01), Cauge et al.
patent: 3996655 (1976-12-01), Cunningham et al.
patent: 4058822 (1977-11-01), Awane et al.
patent: 4115709 (1978-09-01), Inoue et al.

Affiliated with

Also associated with

Rating

High voltage field effect transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High voltage field effect transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High voltage field effect transistor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1020734