High voltage field effect transistor

Details High voltage field effect transistor High voltage field effect transistor

1981-03-30

1984-06-12

James, Andrew J.

357 20, 357 22, 357 88, H01L 2948, H01L 2906, H01L 2980

Patent

active

044545231

ABSTRACT:
A high voltage field effect transistor includes a source region in a first major surface of a semiconductor body and a drain region in a second major surface of the semiconductor body. A first gate region is formed in the first major surface and is surrounded by the source regions. A second gate region surrounds the source region and includes a buried region extending into the semiconductor body between the source and drain regions. The buried gate structure can be fabricated by epitaxial grown over diffused regions in a semiconductor substrate, or alternatively ion implantation can be employed to form the buried gate regions.

REFERENCES:
patent: 3953879 (1976-04-01), O'Connor-d'Arlach et al.
patent: 4223328 (1980-09-01), Terasawa et al.
Von Muench, W., "Producing Semiconductor Devices by Oriented Lateral Overgrowth," IBM Tech. Discl. Bull., vol. 10, No. 10, pp. 1469-1470, Mar. 1968.

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