High voltage durability III-nitride semiconductor device

Details High voltage durability III-nitride semiconductor device High voltage durability III-nitride semiconductor device

2011-08-16

2011-08-16

Louie, Wai-Sing (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257S684000, C257SE29246, C438S167000, C438S172000

Reexamination Certificate

active

07999288

ABSTRACT:
A high voltage durability III-nitride semiconductor device comprises a support substrate including a first silicon body, an insulator body over the first silicon body, and a second silicon body over the insulator body. The high voltage durability III-nitride semiconductor device further comprises a III-nitride semiconductor body characterized by a majority charge carrier conductivity type, formed over the second silicon body. The second silicon body has a conductivity type opposite the majority charge carrier conductivity type. In one embodiment, the high voltage durability III-nitride semiconductor device is a high electron mobility transistor (HEMT) comprising a support substrate including a <100> silicon layer, an insulator layer over the <100> silicon layer, and a P type conductivity <111> silicon layer over the insulator layer. The high voltage durability HEMT also comprises a III-nitride semiconductor body formed over the P type conductivity <111> silicon layer, the III-nitride semiconductor body forming a heterojunction of the HEMT.

REFERENCES:
patent: 4774205 (1988-09-01), Choi
patent: 4940672 (1990-07-01), Zavracky
patent: 7361946 (2008-04-01), Johnson et al.
patent: 2004/0207432 (2004-10-01), Otsuka
patent: 2006/0157733 (2006-07-01), Lucovsky et al.
patent: 2006/0289876 (2006-12-01), Briere
patent: 2007/0007547 (2007-01-01), Beach
patent: 2007/0105335 (2007-05-01), Fitzgerald
patent: 2008/0023706 (2008-01-01), Saito et al.
patent: 2008/0149936 (2008-06-01), Joblot

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