High voltage drivers which avoid -V.sub.s failure modes

Details High voltage drivers which avoid -V.sub.s failure modes High voltage drivers which avoid -V.sub.s failure modes

1996-10-09

1998-09-01

Wambach, Margaret Rose

Miscellaneous active electrical nonlinear devices, circuits, and

Signal converting, shaping, or generating

Current driver

327110, 327382, 327565, H03B 100

Patent

active

058015574

ABSTRACT:
In a level shifted high voltage MOSgate device driver which drives MOSgate devices such as IGBTs and power MOSFETs, effects of negative voltage swings caused by currents commutating through L.sub.S1 and L.sub.S2 inductances in the power circuits are avoided due to several measures. First, the values of the inductances L.sub.S1 and L.sub.S2 are reduced by keeping short conductor lengths, by other layout/wire bonding techniques to reduce the values of the L.sub.S1 and L.sub.S2 inductances. The external, charging capacitor C.sub.b value is increased substantially to reduce the voltage buildup on the internal circuitry. A typical value is 0.47 .mu.F, for a given circuit, IGBT and layout combination. The size of the C.sub.VCC capacitor is selected to keep the supply voltage as stiff as possible. Preferably, C.sub.VCC is at about ten times the value of the sum of the C.sub.b capacitance in the circuit. The resistance R.sub.b in the bootstrap path is reduced as much as possible, preferably to zero. Finally, a resistor R.sub.COM is optionally added between the common nodes of the driver circuit and the power device circuit.

REFERENCES:
patent: 5412332 (1995-05-01), Heeringa et al.
patent: 5686859 (1997-11-01), Majumdar et al.

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