High-voltage diodes formed in advanced power integrated...

Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor

Reexamination Certificate

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C257S141000, C257S144000, C257S557000

Reexamination Certificate

active

07045830

ABSTRACT:
A diode-connected lateral transistor on a substrate of a first conductivity type includes a vertical parasitic transistor through which a parasitic substrate leakage current flows. Means for shunting at least a portion of the flow of parasitic substrate leakage current away from the vertical parasitic transistor is provided.

REFERENCES:
patent: 4117507 (1978-09-01), Pacor
patent: 5343052 (1994-08-01), Oohata et al.
patent: 5512495 (1996-04-01), Mei et al.
patent: 5869850 (1999-02-01), Endo et al.
patent: 6429501 (2002-08-01), Tsuchitani et al.
patent: 6927102 (2005-08-01), Udrea et al.

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