Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Reexamination Certificate
2006-05-16
2006-05-16
Crane, Sara (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with field effect transistor
C257S141000, C257S144000, C257S557000
Reexamination Certificate
active
07045830
ABSTRACT:
A diode-connected lateral transistor on a substrate of a first conductivity type includes a vertical parasitic transistor through which a parasitic substrate leakage current flows. Means for shunting at least a portion of the flow of parasitic substrate leakage current away from the vertical parasitic transistor is provided.
REFERENCES:
patent: 4117507 (1978-09-01), Pacor
patent: 5343052 (1994-08-01), Oohata et al.
patent: 5512495 (1996-04-01), Mei et al.
patent: 5869850 (1999-02-01), Endo et al.
patent: 6429501 (2002-08-01), Tsuchitani et al.
patent: 6927102 (2005-08-01), Udrea et al.
Cai Jun
Harley-Stead Micheal
Holt Jim G.
Crane Sara
Fairchild Semiconductor Corporation
FitzGerald Esq. Thomas R.
Hiscock & Barclay LLP
LandOfFree
High-voltage diodes formed in advanced power integrated... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with High-voltage diodes formed in advanced power integrated..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High-voltage diodes formed in advanced power integrated... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3642754