High voltage diodes

Details High voltage diodes High voltage diodes

1975-01-30

1976-08-17

Ozaki, G.

Metal treatment

Compositions

Heat treating

148171, 148172, 148177, 148179, 148188, 75 65ZM, 357 13, H01L 21225

Patent

active

039752135

ABSTRACT:
A high voltage diode has a lamellar structured body of semiconductor material. The lamellar structure is produced by the thermal gradient zone melting process method of migrating metal "wires" through the body to form a plurality of spaced regions of conductivity opposite to that of the body. The material of the spaced regions is recrystallized semiconductor material of the body suitably doped to form a selected type conductivity and resistivity. The resulting structure is a plurality of integral diodes connected in a series electrical circuit arrangement.

REFERENCES:
patent: 2813048 (1957-11-01), Pfann
patent: 3205101 (1965-09-01), Mlavsky et al.
patent: 3484302 (1969-12-01), Maeda et al.
patent: 3503125 (1970-03-01), Haberecht

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