High voltage diodes

Details High voltage diodes High voltage diodes

1975-03-10

1976-10-26

Wojciechowicz, Edward J.

Metal treatment

Stock

Ferrous

357 33, 357 76, 148 15, H01L 2900, H01L 2904, H01L 2332, H01L 700

Patent

active

039887693

ABSTRACT:
A high voltage diode has a lamellar structured body of semiconductor material. The lamellar structure is produced by the thermal gradient zone melting process method of thermo migrating metal "wires" through the body to form a plurality of spaced regions of conductivity opposite to that of the body. The material of the spaced regions is recrystallized semiconductor material of the body having solid solubility of an impurity dopant therein thereby being suitably doped to form a selected type conductivity and resistivity. The resulting structure is a plurality of integral diodes connected in a series electrical circuit arrangement.

REFERENCES:
patent: 3503125 (1970-03-01), Haberecht

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