Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including high voltage or high power devices isolated from...
Reexamination Certificate
2006-03-21
2006-03-21
Fahmy, Wael (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including high voltage or high power devices isolated from...
C438S549000
Reexamination Certificate
active
07015562
ABSTRACT:
A high-voltage diode has a dopant concentration of an anode region and a cathode region optimized in terms of basic functions static blocking and conductivity. Dopant concentrations range from 1×1017to 3×1018dopant atoms per cm3for the anode emitter, especially on its surface 1019dopant atoms per cm3or more for the cathode emitter and approximately 1016dopant atoms per cm3for the blocking function of an anode-side zone.
REFERENCES:
patent: 6888211 (2005-05-01), Mauder et al.
patent: 2003/0122151 (2003-07-01), Mauder et al.
Mauder Anton
Porst Alfred
Fahmy Wael
Greenberg Laurence A.
Infineon - Technologies AG
Locher Ralph E.
Peralta Ginette
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