High voltage dielectrically isolated solid-state switch

Details High voltage dielectrically isolated solid-state switch High voltage dielectrically isolated solid-state switch

1981-12-22

1986-08-26

Wojciechowicz, Edward J.

357 21, 357 22, 357 234, 357 39, 357 41, 357 49, H01L 2974

Patent

active

046085904

ABSTRACT:
A high voltage solid-state switch, which provides bidirectional blocking, consists of a first p- type semiconductor body separated from a support member (semiconductor substrate) by a dielectric layer with a p+ type anode region located at one end of the semiconductor body, an n+ type cathode region located at the other end, and an n+ type gate region located between the anode and cathode regions. A second p type region of higher impurity concentration than the semiconductor body surrounds the cathode region. Separate low resistance electrical contacts are made to the anode, cathode, and gate regions and to the substrate. The switch is capable of switching from an "ON" and conducting state to an "OFF" (blocking) state by adjusting the potential of the gate region and without having to adjust the potential of the anode or cathode regions.

REFERENCES:
patent: 3417393 (1968-12-01), Cooke
patent: 3657616 (1972-04-01), Mizushima
patent: 3722079 (1973-03-01), Beasom
patent: 3755012 (1973-08-01), George
patent: 3911463 (1975-10-01), Hull
patent: 4060821 (1977-11-01), Houston et al.
patent: 4074293 (1978-02-01), Kravitz
patent: 4146905 (1979-03-01), Appels
IEEE Transactions on Electron Devices, vol. ED-23, No. 8, Aug. 1976, pp. 905-911, "A Field Terminated Diode" Houston et al.
IEEE International Solid State Circuits Conference, Feb. 1978, pp. 222-223, "A MOS-Controlled Triac Device".
Japanese Journal of Applied Physics, vol. 7, No. 12, Dec. 1968, pp. 1484-1490, "Threshold Current Density and Power Saturation in Read Diode".
IBM Technical Disclosure Bulletin, vol. 8, No. 11, Apr. 1966, pp. 1688-1689, "Encapsulation for Semiconductor Devices".

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