High voltage devices

Details High voltage devices High voltage devices

2006-06-16

2009-10-20

Purvis, Sue (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

C257SE29299

Reexamination Certificate

active

07605413

ABSTRACT:
High voltage devices capable of preventing leakage current caused by inversion layer. In the high voltage device, a substrate comprises an active area formed therein, a source region and a drain region formed in the substrate, and a gate structure is formed on the active area to define a channel region in the substrate between the drain region and the source region, wherein the active area has at least one side extending along a direction perpendicular to the channel direction of the channel region, such that the gate structure without completely covering the extension.

REFERENCES:
patent: H1435 (1995-05-01), Cherne et al.
patent: 6333520 (2001-12-01), Inoue
patent: 6583474 (2003-06-01), Yamazaki et al.
patent: 6611027 (2003-08-01), Ichikawa
patent: 6815765 (2004-11-01), Arima
patent: 6847065 (2005-01-01), Lum
patent: 2004/0211983 (2004-10-01), Tien et al.
patent: 2006/0091503 (2006-05-01), Wu et al.
CN Office Action mailed Jul. 4, 2008.

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