Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including high voltage or high power devices isolated from...
Reexamination Certificate
2006-08-29
2006-08-29
Abraham, Fetsum (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including high voltage or high power devices isolated from...
C257S355000, C257S356000, C257S357000, C257S358000, C257S359000, C257S360000
Reexamination Certificate
active
07098522
ABSTRACT:
A high voltage device. A high voltage MOS transistor is applied in the ESD protection device to the structure of which a doped region is added, generating a parasitic semiconductor controlled rectifier (SCR) having a shorter discharge path such that the SCR has faster response enhancing ESD protection.
REFERENCES:
patent: 6459127 (2002-10-01), Lee et al.
patent: 6590262 (2003-07-01), Jiang et al.
patent: 2005/0179087 (2005-08-01), Lin et al.
patent: 493265 (2002-07-01), None
Jou Yeh-Ning
Ker Ming-Dou
Lin Geeng-Lih
Abraham Fetsum
Vanguard International Semiconductor Corporation
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