High-voltage device structure

Details High-voltage device structure High-voltage device structure

2006-06-13

2006-06-13

Le, Dung (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

C257S347000, C257S358000, C257S361000, C257S363000, C257S379000, C257S546000, C257S757000, C438S183000, C438S151000, C438S165000, C438S200000, C438S275000

Reexamination Certificate

active

07061029

ABSTRACT:
A high-voltage device structure disposed in a substrate of a first conductivity type includes a first well and a second well each of a second conductivity type, a source diffusion region and a drain diffusion region each of a first length located in the first well and the second well respectively, and a gate of a second length on the substrate surface. Since the gate of the second length is longer than the source diffusion region and the drain diffusion region of the first length, the two sides of the gate have two spare regions. Two windows are located in the spare regions.

REFERENCES:
patent: 5061981 (1991-10-01), Hall
patent: 5801426 (1998-09-01), Okamura
patent: 5990522 (1999-11-01), Okamura
patent: 6265251 (2001-07-01), Jun et al.
patent: 2002/0060343 (2002-05-01), Gauthier et al.
patent: 2003/0102513 (2003-06-01), Gauthier et al.

Affiliated with

Also associated with

Rating

High-voltage device structure does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High-voltage device structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High-voltage device structure will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3689849