High voltage device embedded non-volatile memory cell and...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor

Reexamination Certificate

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C257S286000, C257S287000

Reexamination Certificate

active

07091535

ABSTRACT:
A high voltage PMOS device having an improved breakdown voltage is achieved. An asymmetrical high voltage integrated circuit structure comprises a gate electrode on a substrate and source and drain regions within the substrate on either side and adjacent to the gate electrode wherein the source region is encompassed by an n-well. A symmetrical high voltage integrated circuit structure comprises a gate electrode on a substrate, source and drain regions within the substrate on either side and adjacent to the gate electrode, and an n-well in the substrate underlying the gate electrode. The n-well in both structures shifts the breakdown point from the silicon surface to the bottom of the source or drain regions.

REFERENCES:
patent: 4442591 (1984-04-01), Haken
patent: 4613385 (1986-09-01), Thomas et al.
patent: 5578855 (1996-11-01), Gaffur et al.
patent: 5650658 (1997-07-01), Beasom
patent: 5698457 (1997-12-01), Noguchi
patent: 5747850 (1998-05-01), Mei
patent: 5976923 (1999-11-01), Tung
patent: 6037632 (2000-03-01), Omura et al.
patent: 6063674 (2000-05-01), Yang et al.
patent: 6087211 (2000-07-01), Kalnitsky et al.
patent: 6563171 (2003-05-01), Disney
patent: 6635925 (2003-10-01), Taniguchi et al.
patent: 2002/0025632 (2002-02-01), Hayashi et al.
patent: 2002/0145173 (2002-10-01), Carpenter et al.
patent: 2004/0056312 (2004-03-01), Asada et al.
Admitted Prior Art, 2 sheets.

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