Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Reexamination Certificate
2006-08-15
2006-08-15
Ho, Tu-Tu (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
C257S286000, C257S287000
Reexamination Certificate
active
07091535
ABSTRACT:
A high voltage PMOS device having an improved breakdown voltage is achieved. An asymmetrical high voltage integrated circuit structure comprises a gate electrode on a substrate and source and drain regions within the substrate on either side and adjacent to the gate electrode wherein the source region is encompassed by an n-well. A symmetrical high voltage integrated circuit structure comprises a gate electrode on a substrate, source and drain regions within the substrate on either side and adjacent to the gate electrode, and an n-well in the substrate underlying the gate electrode. The n-well in both structures shifts the breakdown point from the silicon surface to the bottom of the source or drain regions.
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Admitted Prior Art, 2 sheets.
Chang Ying-Ting
Chou Chien-Chih
Chu Che-Jung
Liu Kuo-Chio
Tsai Hung-Chih
Ho Tu-Tu
Taiwan Semiconductor Manufacturing Company
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