High voltage deep diode power semiconductor switch

Details High voltage deep diode power semiconductor switch High voltage deep diode power semiconductor switch

1975-03-10

1976-10-26

Wojciechowicz, Edward J.

Metal treatment

Stock

Ferrous

357 37, 357 38, 357 39, 148 15, H01L 2904, H01L 2974, H01L 29747, H01L 700

Patent

active

039887677

ABSTRACT:
A semiconductor switch is a lamellar body of semiconductor material having two major opposed surfaces and at least one group of four regions of alternate type conductivity. At least three of the four regions have recrystallized semiconductor material having a solid solubility of metal therein to impart the type conductivity thereto. Each of the first and third regions have the same type conductivity but different levels of impurity concentration. Each of the second and fourth regions have the same type conductivity but different levels of impurity concentration.

REFERENCES:
patent: 3514715 (1970-05-01), Kosonocky

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