High voltage current limiter and method for making

Details High voltage current limiter and method for making High voltage current limiter and method for making

1995-11-21

1997-05-13

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Device protection

257402, 257403, 257360, H01L 2941

Patent

active

056295367

ABSTRACT:
A current limiter (15) is formed between a silicon substrate (10) and a source region (17) by a channel implant region (20). The channel implant region (20) is not modulated by a gate structure so the maximum voltage that can flow between the silicon substrate (10) and the source region (17) is determined by the doping profile of the ever-present channel implant region (20). A pinch-off structure (12) is used to form a depletion region which can support a large voltage potential between the silicon substrate (10) and the source region (17). In an alternate embodiment, a bipolar device is formed such that a limited current flow can be directed into a base region (32) which is used to modulate a current flow between silicon substrate (30) and an emitter region (38). Using the current limiters (15, 35) it is possible to form an AC current limiter (50) that will limit the current flow regardless of the polarity of the voltage placed across two terminals (51, 52).

REFERENCES:
patent: 5045902 (1991-09-01), Bancal
patent: 5055895 (1991-10-01), Akiyama et al.
patent: 5191279 (1993-03-01), Zommer
patent: 5293051 (1994-03-01), Mariyama et al.
patent: 5422509 (1995-06-01), Zambrano

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