High voltage component having a low stray current

Details High voltage component having a low stray current High voltage component having a low stray current

1994-10-28

1996-09-10

Meier, Stephen

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

257509, H01L 2900

Patent

active

055548792

ABSTRACT:
A high voltage semiconductor component having a low stray current comprises a central region (N.sup.-) surrounded by P-type layers (P.sub.1, P.sub.2) forming with the central region first and second junctions (J.sub.1, J.sub.2). The first and second junctions have an apparent perimeter on a same main surface of the component. A groove is formed between said apparent perimeters and is filled with a passivation glass (18). The surface of the glass is covered, above the perimeter of each junction, with a metallization (21, 22) contacting the layer of the second conductivity type corresponding to the junction.

REFERENCES:
patent: 3806771 (1974-04-01), Petruzella
patent: 4148053 (1979-04-01), Bosselaar et al.
patent: 4468686 (1984-08-01), Rosenthal
patent: 4766474 (1988-08-01), Nakagawa et al.
patent: 5003372 (1991-03-01), Kim et al.
patent: 5060047 (1991-10-01), Jaume et al.
patent: 5077224 (1991-12-01), Schwarzbauer et al.

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