Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating
Reexamination Certificate
2007-09-18
2007-09-18
Menz, Douglas M. (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
With means to control surface effects
Insulating coating
C257S519000, C257S400000, C257S460000, C257S447000, C257S442000, C257S452000
Reexamination Certificate
active
11357769
ABSTRACT:
A charge coupled device for detecting electromagnetic and particle radiation is described. The device includes a high-resistivity semiconductor substrate, buried channel regions, gate electrode circuitry, and amplifier circuitry. For good spatial resolution and high performance, especially when operated at high voltages with full or nearly full depletion of the substrate, the device can also include a guard ring positioned near channel regions, a biased channel stop, and a biased polysilicon electrode over the channel stop.
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Caron R'Sue P.
Lawrence Berkeley National Laboratory
The Regents of the University of California
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