High voltage CMOS switch with protection against diffusion to we

Details High voltage CMOS switch with protection against diffusion to we High voltage CMOS switch with protection against diffusion to we

1991-12-31

1993-09-07

Westin, Edward P.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

3074821, 307451, 307475, H03K 1716, H03K 1901

Patent

active

052432360

ABSTRACT:
A high voltage CMOS n-well switch with guarding against reverse junction breakdown, as well as gate-aided breakdown. The CMOS switch of the present invention comprises two pairs of cascoding p-channel MOSFET loads, two pairs of cascoding n-channel MOSFET drivers and an inverter for input. One device in each pair of MOSFETs is used as a guard against gate-aided breakdown. The p-channel MOSFETs have independent n-wells so that the guard devices have their n-wells independently biased without being pulled by the n-wells of the load devices. The inverter is used to provide complementary inputs to the switch. By having independent n-wells, the breakdown voltage of the switch is raised above p+
-well reverse breakdown voltage.

REFERENCES:
patent: 4039869 (1977-08-01), Goldman et al.
patent: 4045691 (1977-08-01), Asano
patent: 4161663 (1979-07-01), Martinez
patent: 5157281 (1992-10-01), Santin et al.

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