High voltage CMOS circuit

Details High voltage CMOS circuit High voltage CMOS circuit

1978-05-01

1980-03-04

Anagnos, Larry N.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307205, 307215, 307270, 307304, 307DIG1, H03K 1760, H03K 1704, H03K 1908, H03K 1920

Patent

active

041918983

ABSTRACT:
A CMOS circuit having high voltage capability is provided. At least one P channel transistor is coupled between a first voltage node and an output of the circuit. At least two N channel transistors are coupled in series between the output of the circuit and a second voltage node. The at least two N channel transistors each have a separate tub which is connected to the source of each respective N channel transistor. This arrangement of the N channel transistors provides at least one tub which is isolated from the voltage nodes when the output of the circuit is at a potential substantially equal to a voltage present at the first voltage node.

REFERENCES:
patent: 3436621 (1969-04-01), Crawford
patent: 3825772 (1974-07-01), Ainsworth
patent: 3867646 (1975-02-01), McCoy
patent: 3900746 (1975-08-01), Kraft et al.
patent: 3916430 (1975-10-01), Heuner et al.
patent: 3980896 (1976-09-01), Kato
patent: 3991326 (1976-11-01), Kawagoe et al.
patent: 4006491 (1977-02-01), Alaspa et al.
patent: 4023050 (1977-05-01), Fox et al.
patent: 4039862 (1977-08-01), Dingwall et al.
patent: 4069430 (1978-01-01), Masuda

Affiliated with

Also associated with

Rating

High voltage CMOS circuit does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High voltage CMOS circuit, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High voltage CMOS circuit will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2041463