High-voltage CMOS charge pump

Miscellaneous active electrical nonlinear devices – circuits – and – Specific identifiable device – circuit – or system – With specific source of supply or bias voltage

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C363S060000

Reexamination Certificate

active

08049553

ABSTRACT:
Provided is a high-voltage complementary metal-oxide semiconductor (CMOS) charge pump. The high-voltage CMOS charge pump includes a first Dickson charge pump for doubling a supply voltage based on an input clock signal and a complementary input clock signal with reversed phases to each other; a level shifter for doubling voltage levels of the input clock signal and the complementary input clock signal based on an output signal and a complementary output signal of the first Dickson charge pump as power sources, to thereby output a doubled-output clock signal and a doubled-output clock signal; and a second Dickson charge pump for doubling voltage levels of the output signal and the complementary output signal based on the doubled-output clock signal and the doubled-complementary output clock signal from the level shifter.

REFERENCES:
patent: 5436587 (1995-07-01), Cernea
patent: 5508971 (1996-04-01), Cernea et al.
patent: 5748032 (1998-05-01), Baek
patent: 5943226 (1999-08-01), Kim
patent: 6107863 (2000-08-01), Iwata
patent: 6525949 (2003-02-01), Johnson et al.
patent: 6545529 (2003-04-01), Kim
patent: 6922096 (2005-07-01), Cernea
patent: 7256641 (2007-08-01), Namekawa et al.
patent: 7259612 (2007-08-01), Saether
patent: 7282987 (2007-10-01), Lee et al.
patent: 7439795 (2008-10-01), Yanagigawa et al.
patent: 7576523 (2009-08-01), Ogawa et al.
patent: 7656221 (2010-02-01), Maejima
patent: 7772914 (2010-08-01), Jung
patent: 2004/0164766 (2004-08-01), Yu
patent: 2005/0258810 (2005-11-01), Lin
patent: 2006/0049866 (2006-03-01), Namekawa et al.
patent: 2007/0053227 (2007-03-01), Ragone et al.
patent: 2007/0096796 (2007-05-01), Firmansyah et al.
patent: 1020020078971 (2002-10-01), None
patent: 1020070019234 (2007-02-01), None
International Search Report for PCT/KR2008/002820 filed May 21, 2008.
Written Opinion of the International Searching Authority for PCT/KR2008/002820 filed May 21, 2008.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

High-voltage CMOS charge pump does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High-voltage CMOS charge pump, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High-voltage CMOS charge pump will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4286363

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.