High voltage charge pump

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

3072962, H03K 1710

Patent

active

051967391

ABSTRACT:
A charge pump circuit for use in Electrically Erasable Programmed Read-Only Memories in described herein. The charge pump uses a single clock signal, a voltage feedback arrangement to allow a D.C. voltage to pass a D.C. voltage, and a plurality of transistors, each transistor being coupled in series with each grounded-gate transistor, eliminating reverse-breakdown voltage loads on the grounded gate transistors.

REFERENCES:
patent: 4701637 (1987-10-01), Piro
patent: 4792705 (1988-12-01), Ouyang et al.
patent: 4964082 (1990-10-01), Sato et al.
patent: 5039877 (1991-08-01), Chern

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

High voltage charge pump does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High voltage charge pump, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High voltage charge pump will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1354502

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.