High voltage boosted word line supply charge pump and regulator

Details High voltage boosted word line supply charge pump and regulator High voltage boosted word line supply charge pump and regulator

1993-10-12

1995-04-11

LaRoche, Eugene R.

Static information storage and retrieval

Powering

36518909, 326 88, 327589, G11C 1300

Patent

active

054065232

ABSTRACT:
A circuit for providing an output voltage for a DRAM word line which can be used to drive memory word lines which can be as high as 2V.sub.dd. Transistors in a boosting circuit are fully switched, eliminating the reduction of the boosting voltage by V.sub.tn as in the prior art. The boosting capacitors are charged by V.sub.dd, thus eliminating draft tracking problems associated with clock boosting sources and V.sub.dd. A regulator detects conduction current of a replica of a memory cell access transistor, shutting off the boosting circuit clock oscillator when the correct voltage to operate the access transistor has been reached.

REFERENCES:
patent: 4208595 (1980-06-01), Gladstein
patent: 4433253 (1984-02-01), Zapisek
patent: 4906056 (1990-03-01), Taniguchi

Affiliated with

Also associated with

Rating

High voltage boosted word line supply charge pump and regulator does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High voltage boosted word line supply charge pump and regulator , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High voltage boosted word line supply charge pump and regulator will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1543507