High voltage boosted word line supply charge pump and regulator

Details High voltage boosted word line supply charge pump and regulator High voltage boosted word line supply charge pump and regulator

1998-10-26

2000-04-25

Zarabian, A.

Static information storage and retrieval

Powering

36518909, G11C 700

Patent

active

060552018

ABSTRACT:
A circuit for providing an output voltage for a DRAM word line which can be used to drive memory word lines which can be as high as 2V.sub.dd. Transistors in a boosting circuit are fully switched, eliminating the reduction of the boosting voltage by V.sub.tn as in the prior art. The boosting capacitors are charged by V.sub.dd, thus eliminating drift tracking problems associated with clock boosting sources and V.sub.dd. A regulator detects conduction current of a replica of a memory cell access transistor, shutting off the boosting circuit clock oscillator when the correct voltage to operate the access transistor has been reached.

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Kitsukawa, Goro et al., "A 1-Mbit BiCMOS DRAM Using Temperature-Compensation Circuit Techniques," IEEE Journal of Solid-State Circuits, vol. 24, No. 4, Jun. 1989, pp. 597-601.

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