High-voltage bipolar transistor for integrated circuits

Details High-voltage bipolar transistor for integrated circuits High-voltage bipolar transistor for integrated circuits

1976-03-03

1977-12-20

Miller, Jr., Stanley D.

357 34, 357 53, H01L 2906

Patent

active

040645231

ABSTRACT:
Combined junction and metallization morphology for achieving high-voltage capability in a shallow integrated bipolar transistor. The improvement comprises closely spaced emitter and base metallization in conjunction with a convexity in the surface portion of the collector-base p-n junction.

REFERENCES:
patent: 3836998 (1974-09-01), Kocsis et al.
Camenzind et al., "IC's Break Through the Voltage Barrier", Electronics, Mar. 31, 1969, pp. 90-95.

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