High voltage and power BiCMOS driving circuit

Details High voltage and power BiCMOS driving circuit High voltage and power BiCMOS driving circuit

1988-01-15

1989-08-01

Miller, Stanley D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

3072964, 3072965, 307446, 307570, H03K 326, H03K 301, H03K 1760

Patent

active

048535591

ABSTRACT:
This invention is related to an integrated driving circuit which can control high voltage and power, and more particularly to a high voltage and power driving circuit by employing BiCMOS technology. The principal object of this invention is to provide an integrated high voltage and high power driving circuit which is reliable by using BiCMOS technology without external discrete components. According to this invention, in the high voltage and power driving circuit using bipolar transistors and high voltage CMOS transistors, a high voltage and power driving circuit comprising: the current driving part composed of high voltage MOS transistor inverter and high current driving bipolar transistor 1 with the supply voltage of the certain multiple of breakdown voltage between collector and emitter of the bipolar transistor; the load driving part which drives the load with high current and high voltage of said certain multiple of the breakdown voltage which is composed of the high voltage MOS transistor inverter and the bipolar transistor 2; the reference voltage generation part which divides said certain multiple supply voltage into the breakdown voltages to prevent the bipolar transistors 1 and 2 from breaking down between the collector and the emitter; the reference voltage transfer part which transfers said reference voltage to the connection point of said bipolar transistor 1 and 2 by the switching action of the high voltage MOS transistor depending on said CMOS level signal input; and the high voltage, high power driving circuit using BiCMOS whose feature is to use delay part to prevent the operation of said load driving part till the voltage at said connection point of the bipolar transistor 1 and 2 reaches the divided voltage in the reference voltage generation part.

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patent: 4721867 (1988-01-01), Taki
Mano, M. Morris, Digital Integrated Circuits, pp. 569-574, 1979.

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