Electricity: electrical systems and devices – Electrostatic capacitors – Fixed capacitor
Patent
1990-09-13
1992-05-05
Griffin, Donald A.
Electricity: electrical systems and devices
Electrostatic capacitors
Fixed capacitor
29 2542, 357 51, H01G 700, H01G 900, H01G 406
Patent
active
051113554
ABSTRACT:
A thin film capacitor for use in an integrated circuit includes a lower plate disposed on the silicon substrate of the integrated circuit. The lower plate comprises a barrier layer of conductive material which prevents transport of silicon from the silicon substrate into a layer of dielectric material which is disposed between the lower plate and an upper plate. A portion of the barrier layer can be consumed and transferred into dielectric material by, for example, high temperature oxidation which generates a symmetric series capacitor with the dielectric layer. A layer comprising an oxide of the barrier layer material is formed between the barrier layer and the dielectric layer by consuming an upper portion of the barrier layer. The capacitor is constructed by forming the barrier layer on at least a portion of the silicon substrate, forming the dielectric layer over an upper surface of the barrier layer, oxidizing the upper surface of the barrier layer and forming a layer of electrically conductive material on an upper surface of the dielectric layer.
REFERENCES:
patent: 4539434 (1985-09-01), Krause
patent: 4882649 (1989-11-01), Chen et al.
patent: 4959745 (1990-09-01), Suguro
"Leakage-Current Reduction in Thin Ta.sub.2 O.sub.5 Films for High-Density VLSI Memories", C. Hashimoto, et al., IEEE Transactions on Electron Devices, vol. 26, No. 1, Jan., 1989, pp. 14-18.
"Promising Storage Capacitor Structors with Thin Ta.sub.2 O.sub.5 Film for Low-Power High-Density DRAM's", H. Shinriki, et al., IEEE Transactions on Electron Devices, vol. 37, No. 9, Sep., 1990, pp. 1939-1947.
"A High Quality, High Temperature Compatible Tantalum Oxide Film For Advance DRAM Applications", B. W. Shen, et al., IEEE, IEDM, 1987, pp. 582-585.
"High Quality Ta.sub.2 O.sub.5 Films Using Ultra-High Purity Ta Sputtering Target", C. Hashimoto; et al., Extended Abstracts of the 18th (1986 International) Conference on Solid State Devices and Materials, Tokyo, 1986, pp. 253-256.
"High Capcitance Ultra-Thin Ta.sub.2 O.sub.5 Dielectric Film Applied To A High-Speed Bipolar Memory Cell", Y. Nishioka, et al., IEEE, IEDM 85, pp. 42-45.
"Asymmetric Conduction in Thin Film Tantalum/Tantalum Oxide/Metal Structures: Interstitial and Substitional Impurity Effects and Direct Detection of Flaw Breakdown", N. Alexrod, et al., Journal Electrochemical Society: Solid State Science, vol. 116, No. 4, Apr. 1969.
"Photo-Process of Tantalum Oxide Films and Their Characteristics", M. Matsui, et al., Japanese Journal of Applied Physics, vol. 27, No. 4, Apr. 1988, pp. 506-511.
Anand Kranti V.
Thomas Michael E.
Griffin Donald A.
Linguiti Frank M.
Murray William H.
National Semiconductor Corp.
Rappaport Irving S.
LandOfFree
High value tantalum oxide capacitor does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with High value tantalum oxide capacitor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High value tantalum oxide capacitor will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1417445