High value FET resistors on a submicron MOS technology

Details High value FET resistors on a submicron MOS technology High value FET resistors on a submicron MOS technology

1998-03-11

2000-05-30

Lam, Tuan T.

Miscellaneous active electrical nonlinear devices, circuits, and

Signal converting, shaping, or generating

Converting input voltage to output current or vice versa

327308, 327315, 330 81R, H03K 301

Patent

active

06069503&

ABSTRACT:
A method and apparatus of biasing a transistor to perform as a resistive device in an integrated circuit die is disclosed. A base lead of a transistor is coupled to a first lead of the transistor. A voltage is applied to a first lead such that the voltage does not exceed a threshold voltage of the transistor.

REFERENCES:
patent: 5008565 (1991-04-01), Taylor
patent: 5010385 (1991-04-01), Shoemaker
patent: 5168180 (1992-12-01), Bayer et al.
patent: 5210503 (1993-05-01), Sawamura
patent: 5296726 (1994-03-01), MacElwee
patent: 5744994 (1998-04-01), Williams
patent: 5880604 (1999-03-01), Kawahara

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